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Freescale Semiconductor Technical Data
Document Number: MRFG35010N Rev. 6, 2/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. * Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 900 mW Power Gain -- 10 dB Efficiency -- 28% * 9 Watts P1dB @ 3.55 GHz * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35010NT1
3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Operating Case Temperature Range Symbol VDSS PD VGS Pin Tstg Tch TC Symbol RJC Value 15 22.7(2) 0.15(2) -5 33 - 65 to +150 175 - 20 to +85 Unit Vdc W W/C Vdc dBm C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Value 6.6(2) Unit C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Simulated.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRFG35010NT1 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 1.9 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate- Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 12 Vdc, IDQ = 180 mA) Power Gain (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Drain Efficiency (VDD = 12 Vdc, IDQ = 180 mA, Pout = 900 mW Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 900 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- - 1.2 - 1.2 9.0 -- 23 Typ 2.9 < 1.0 0.1 2.0 - 1.0 - 0.95 10 9 28 Max -- 100 1.0 15 - 0.7 - 0.7 -- -- -- Unit Adc Adc mAdc mAdc Vdc Vdc dB W %
ACPR
--
- 43
- 40
dBc
MRFG35010NT1 2 RF Device Data Freescale Semiconductor
VBIAS
VSUPPLY
C11
C10
C9
C8
C7
C6
C5 C4 C19
C18
C17
C16
C15
C14
C13
C12
Z9 R1
Z12
RF INPUT Z1 Z2 Z3 Z4 Z5 C3 C1 C2 Z6
RF OUTPUT Z7 Z8 Z10 Z11 Z13 Z14 Z15 Z16 C20 C22 C21 Z17
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z10 Z9
0.045 x 0.689 Microstrip 0.045 x 0.089 Microstrip 0.020 x 0.360 Microstrip 0.045 x 0.029 Microstrip 0.045 x 0.061 Microstrip 0.045 x 0.055 Microstrip 0.300 x 0.125 Microstrip 0.146 x 0.070 Microstrip 0.025 x 0.485 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB
0.400 x 0.215 Microstrip 0.025 x 0.497 Microstrip 0.025 x 0.271 Microstrip 0.025 x 0.363 Microstrip 0.025 x 0.041 Microstrip 0.045 x 0.050 Microstrip 0.045 x 0.467 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part C1, C21, C22 C2 C3 C4, C19, C20 C5, C18 C6, C17 C7, C16 C8, C15 C9, C14 C10, C13 C11, C12 R1 Description 0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.5 pF Chip Capacitor 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 F Chip Capacitors 39K pF Chip Capacitors 10 F Chip Capacitors 47 Chip Resistor Part Number 08051J0R5BBT 06035J0R2BBT 06035J0R5BBT 08051J6R8BBT 100A100JP150X 100A101JP150X 100B101JP500X 100B102JP50X CDR33BX104AKWS 200B393KP50X GRM55DR61H106KA88B D55342M07B47JOR Manufacturer AVX AVX AVX AVX ATC ATC ATC ATC Kemet ATC Kemet Newark
MRFG35010NT1 RF Device Data Freescale Semiconductor 3
C11
C10
C9
C14 C13 C8 C7 C6 C5
C12
C15 C16 C17 C18 C19 R1 C3 C20
C4
C1
C2
C22
C21
MRFG35010XX, Rev. 5
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35010NT1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
0 IRL, INPUT RETURN LOSS (dB) -10 -20 -30 -40 -50 -60 0.1 1 Pout, OUTPUT POWER (WATTS) 10 ACPR IRL VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.66 P/A 3GPP W-CDMA S = 0.898e-134.03_, L = 0.828e-140.67_ 0 -10 -20 -30 -40 -50 -60
Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power
12.5 G T , TRANSDUCER GAIN (dB) 12 VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA S = 0.898e-134.03_, L = 0.828e-140.67_ PAE 11 GT
60 50 40 30 20 10 0 10 PAE, POWER ADDED EFFICIENCY (%)
11.5
10.5 10 9.5 0.1 1 Pout, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown.
ACPR (dBc)
MRFG35010NT1 RF Device Data Freescale Semiconductor 5
Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA
f GHz 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 2.7 2.75 S11 |S11| 0.946 0.945 0.944 0.945 0.945 0.944 0.945 0.945 0.944 0.945 0.945 0.944 0.944 0.944 0.944 0.943 0.944 0.940 0.946 0.943 0.944 0.943 0.942 0.945 0.946 0.945 0.945 0.947 0.946 0.945 0.948 0.947 0.947 0.948 0.948 0.948 0.949 0.949 0.948 0.948 0.948 0.946 0.946 0.946 0.945 0.943 - 177.11 - 178.28 - 179.44 179.50 178.60 177.66 176.74 175.95 175.17 174.36 173.63 172.90 172.09 171.29 170.57 169.71 168.85 168.20 167.07 166.35 163.30 162.54 161.81 161.17 160.55 160.01 159.48 159.00 158.52 158.06 157.71 157.30 156.92 156.58 156.32 156.04 155.73 155.33 154.99 154.57 154.13 153.68 153.15 152.54 151.98 151.22 |S21| 4.710 4.303 3.963 3.674 3.427 3.211 3.023 2.853 2.705 2.570 2.447 2.337 2.234 2.139 2.052 1.971 1.894 1.823 1.754 1.691 1.626 1.573 1.523 1.474 1.429 1.387 1.348 1.310 1.274 1.240 1.209 1.179 1.152 1.127 1.102 1.079 1.058 1.037 1.019 1.002 0.986 0.971 0.957 0.943 0.930 0.918 S21 82.28 80.79 79.23 77.69 76.28 74.83 73.24 71.74 70.36 68.88 67.47 66.06 64.52 63.11 61.73 60.26 58.81 57.49 56.13 54.75 53.36 52.16 50.87 49.56 48.35 47.14 45.88 44.70 43.55 42.30 41.23 40.16 39.09 37.97 36.90 35.82 34.70 33.62 32.54 31.44 30.35 29.28 28.12 26.91 25.73 24.52 |S12| 0.016 0.016 0.016 0.016 0.016 0.016 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.018 0.017 0.017 0.017 0.018 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.020 0.020 0.020 0.021 S12 8.19 7.57 7.60 7.44 7.44 7.21 7.65 7.16 7.34 7.31 7.08 7.29 7.56 7.46 7.43 7.47 7.28 7.56 7.92 7.59 7.06 7.24 7.48 7.46 7.46 7.84 7.89 7.97 7.87 7.89 7.61 7.78 7.65 7.40 7.22 6.98 7.24 7.52 7.60 7.49 7.69 8.05 8.01 8.01 7.82 7.27 |S22| 0.759 0.758 0.758 0.758 0.757 0.757 0.756 0.756 0.756 0.755 0.755 0.756 0.756 0.756 0.757 0.757 0.757 0.755 0.762 0.759 0.762 0.763 0.764 0.765 0.766 0.767 0.767 0.768 0.770 0.769 0.771 0.772 0.773 0.773 0.773 0.775 0.775 0.775 0.776 0.777 0.776 0.777 0.777 0.776 0.777 0.778 S22 - 179.39 - 179.99 179.39 178.74 177.98 177.28 176.57 175.75 174.99 174.18 173.33 172.51 171.82 171.01 170.22 169.52 168.83 168.39 167.55 167.32 169.20 168.75 168.22 167.71 167.18 166.73 166.15 165.58 165.10 164.54 164.05 163.59 163.12 162.56 162.01 161.53 161.05 160.43 159.99 159.53 158.91 158.40 157.88 157.34 156.80 156.36
MRFG35010NT1 6 RF Device Data Freescale Semiconductor
Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA (continued)
f GHz 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55 3.6 3.65 3.7 3.75 3.8 3.85 3.9 3.95 4 4.05 4.1 4.15 4.2 4.25 4.3 4.35 4.4 4.45 4.5 4.55 4.6 4.65 4.7 4.75 4.8 4.85 4.9 4.95 5 S11 |S11| 0.943 0.943 0.942 0.942 0.943 0.942 0.940 0.940 0.941 0.938 0.939 0.939 0.938 0.938 0.939 0.938 0.938 0.939 0.938 0.937 0.937 0.938 0.938 0.939 0.939 0.939 0.941 0.941 0.940 0.939 0.940 0.940 0.939 0.939 0.939 0.937 0.937 0.937 0.936 0.935 0.935 0.934 0.932 0.931 0.929 150.66 149.88 149.16 148.32 147.41 146.51 145.45 144.41 143.33 142.25 141.15 140.02 138.89 137.88 136.68 135.63 134.63 133.60 132.68 131.84 130.92 130.07 129.29 128.60 127.88 127.23 126.66 126.23 125.73 125.28 124.85 124.45 124.01 123.63 123.27 122.84 122.32 121.88 121.36 120.72 120.04 119.35 118.49 117.69 116.74 |S21| 0.906 0.894 0.883 0.872 0.862 0.853 0.842 0.833 0.823 0.814 0.804 0.795 0.785 0.776 0.767 0.757 0.748 0.739 0.729 0.720 0.711 0.702 0.694 0.686 0.678 0.671 0.664 0.658 0.651 0.645 0.640 0.635 0.630 0.627 0.623 0.620 0.619 0.618 0.617 0.615 0.614 0.613 0.613 0.614 0.614 S21 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.32 8.97 7.61 6.26 4.96 3.67 2.34 1.04 - 0.25 - 1.47 - 2.69 - 3.89 - 5.07 - 6.23 - 7.34 - 8.46 - 9.57 - 10.65 - 11.72 - 12.82 - 13.86 - 14.92 - 16.00 - 17.01 - 18.03 - 19.03 - 20.17 - 21.26 - 22.45 - 23.68 - 24.90 - 26.12 - 27.41 - 28.72 - 30.05 |S12| 0.021 0.022 0.021 0.021 0.021 0.022 0.022 0.022 0.022 0.022 0.022 0.022 0.022 0.023 0.023 0.023 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.025 0.025 0.025 0.025 0.026 0.026 0.026 0.027 0.027 0.028 0.028 0.029 0.029 0.030 0.030 0.031 0.031 0.031 0.031 0.032 0.033 S12 6.42 5.21 4.17 4.03 3.53 3.11 2.65 2.43 2.48 2.48 2.08 1.99 2.11 2.05 1.79 1.56 1.02 0.44 - 0.54 - 1.30 - 1.98 - 2.38 - 2.22 - 2.00 - 1.80 - 2.04 - 2.17 - 2.15 - 2.48 - 2.81 - 2.79 - 2.73 - 3.22 - 3.26 - 3.64 - 3.74 - 4.57 - 5.02 - 6.01 - 7.22 - 7.64 - 8.05 - 8.39 - 8.32 - 8.48 |S22| 0.776 0.777 0.778 0.778 0.778 0.780 0.780 0.779 0.782 0.781 0.781 0.782 0.783 0.782 0.783 0.785 0.783 0.783 0.785 0.785 0.785 0.786 0.787 0.787 0.788 0.789 0.789 0.788 0.789 0.789 0.788 0.789 0.789 0.788 0.788 0.789 0.788 0.788 0.788 0.787 0.786 0.786 0.786 0.785 0.786 S22 155.80 155.28 154.81 154.25 153.67 153.18 152.64 152.04 151.43 150.92 150.33 149.74 149.19 148.72 147.97 147.40 146.88 146.20 145.61 145.17 144.52 143.87 143.24 142.61 141.94 141.34 140.69 140.01 139.31 138.65 137.91 137.16 136.45 135.67 134.88 134.16 133.36 132.50 131.67 130.83 129.91 129.03 128.20 127.24 126.32
MRFG35010NT1 RF Device Data Freescale Semiconductor 7
NOTES
MRFG35010NT1 8 RF Device Data Freescale Semiconductor
NOTES
MRFG35010NT1 RF Device Data Freescale Semiconductor 9
NOTES
MRFG35010NT1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A F
3
0.146 3.71
0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W
G
RF Device Data Freescale Semiconductor
EEEE E EEEEEE EEE EEEE E EEEEEE E EEEEEE EEE
1 3 ZONE X
2
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
S
VIEW Y - Y CASE 466 - 03 ISSUE D PLD - 1.5 PLASTIC
MRFG35010NT1 11
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MRFG35010NT1
Rev. 12 6, 2/2006 Document Number: MRFG35010N
RF Device Data Freescale Semiconductor

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